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參數資料
| 型號： | 2SB0644R |
| 英文描述： | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SC-71 |
| 中文描述： | 晶體管|晶體管|進步黨| 50V五（巴西）總裁| 500mA的一（c）|律師- 71 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 75K |
| 代理商： | 2SB0644R |
1
Transistor
2SB0642 (2SB642)
Silicon PNP epitaxial planer type
For low-power general amplification
I Features
G High foward current transfer ratio hFE.
G M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9
±0.1
0.55
±0.1
0.45
±0.05
1.0
±
0.1
1.0
2.5
±0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
±
0.1
2.0
±0.2
2.4
±
0.2
1.25
±
0.05
4.1
±
0.2
4.5
±
0.1
2.5
1
2
3
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–50
–7
–200
–100
400
150
–55 ~ +150
Unit
V
mA
mW
C
I Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –20V, IB = 0
IC = –10
A, I
E = 0
IC = –2mA, IB = 0
IE = –10
A, I
C = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 2mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–60
–50
–7
160
typ
80
3.5
max
–1
460
–1
Unit
nA
A
V
MHz
pF
*h
FE Rank classification
Rank
Q
R
S
hFE
160 ~ 260
210 ~ 340
290 ~ 460
Note.) The Part number in the Parenthesis shows conventional part number.
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