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參數資料
| 型號： | 2SB0945 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Switching |
| 中文描述： | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 85K |
| 代理商： | 2SB0945 |
Power Transistors
2SB0945
(2SB945)
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00024BED
For power switching
Complementary to 2SD1270
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one screw.
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
10 mA, I
B
= 0
V
CB
=
100 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
2 A
I
C
=
4 A, I
B
=
0.2 A
I
C
=
4 A, I
B
=
0.2 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
I
C
=
2 A, I
B1
=
0.2 A, I
B2
=
0.2 A
V
CC
=
50 V
80
V
Collector-base cutoff current (Emitter open)
I
CBO
10
50
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
h
FE2
*
Forward current transfer ratio
45
60
260
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
0.5
1.5
V
Base-emitter saturation voltage
V
Transition frequency
f
T
30
MHz
Turn-on time
t
on
t
stg
0.13
μ
s
μ
s
μ
s
Storage time
0.50
Fall time
t
f
0.13
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
130
80
7
5
10
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power
P
C
40
W
dissipation
T
a
=
25
°
C
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
R
Q
P
h
FE2
60 to 120
90 to 180
130 to 260
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
(
0.5
+0.2
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.3
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB0945(2SB945) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
| 2SB09450Q | 功能描述:TRANS PNP 80VCEO 5A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB0945P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB0945PQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-220AB |
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