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參數資料
| 型號： | 2SB1094-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SB1094-AZ |
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confirm that this is the latest version.
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1998
Document No. D16186EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1094
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIER
DATA SHEET
2002
FEATURES
The 2SB1094 features ratings covering a wide range of
applications and is ideal for power supplies or a variety of drives
in audio and other equipment.:
VCEO
≥ 60 V, VEBO ≥ 7.0 V, IC(DC) ≤ 3.0 A
Mold package that does not require an insulating board or
insulation bushing
Complementary transistor with 2SD1585
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
3.0
A
Collector current (pulse)
IC(pulse)*
5.0
A
Base current (DC)
IB(DC)
0.6
A
Total power dissipation
PT (Tc = 25
°C)
15
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1094K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1094L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1094M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1096 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB1097 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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