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參數資料
| 型號： | 2SB1132R |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 431K |
| 代理商： | 2SB1132R |
2SB1132
PNP
Plastic-Encapsulate
Transistors
Features
Power dissipation: PCM = 0.5W(Tamb=25
℃)
Collector current: ICM = -1A
Collector-base voltage: V(BR)CBO = -40V
Operating and storage junction temperature range
TJ, Tstg: -55
℃ to + 150℃
Electrical Characteristics @ 25
℃ Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Unit
VCEO
Collector-Emitter Voltage
(IC=-50
μA, IE=0)
-32
---
V
VCBO
Collector-Base Voltage
(IC=-1
μA, IB=0)
-40
---
V
VEBO
Emitter-Base Voltage
(IE=-50
μA, IC=0)
-5.0
---
V
ICBO
Collector cut-off Current
(VCB=-20V, IE=0)
---
-0.5
μA
IEBO
Emitter cut-off Current
(VEB=-5V, IC=0)
---
-0.5
μA
hFE
DC current gain
(VCE=-2V, IC=-0.1A)
82
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-2A, IB=-0.1A)
---
-0.5
V
fT
Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
---
150
---
MHz
Cob
Collector output capacitance
(VCB=-10V, IE=0, f=1MHz)
---
20
30
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
BAP
BAQ
BAR