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參數資料
| 型號： | 2SB1133Q |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220ML, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 35K |
| 代理商： | 2SB1133Q |
2SB1133 / 2SD1666
No.3031-1/4
Features
Wide ASO(Adoption of MBIT process).
Micaless package facilitating easy mounting.
High reliability.
Specifications
( ) : 2SB1133
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(
)60
V
Collector-to-Emitter Voltage
VCEO
(
)60
V
Emitter-to-Base Voltage
VEBO
(
)6
V
Collector Current
IC
(
)3
A
Collector Current (Pulse)
ICP
(
)8
A
Collector Dissipation
PC
2W
Tc=25
°C25
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
40 to +150
°C
Electrical Characteristics a t Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)100
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)100
A
DC Current Gain
hFE(1)
VCE=(--)5V, IC=(--)0.5A
*70
*280
hFE(2)
VCE=(--)5V, IC=(--)3A
20
Continued on next page.
* : The 2SB1133 / 2SD1666 are classified by 0.5A hFE as follows :
Rank
Q
R
S
hFE
70 to 140 100 to 200 140 to 280
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3031A
2SB1133 / 2SD1666
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2041A
[2SB1133 / 2SD1666]
72501 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.4
4.5
2.8
0.7
2.55
2.4
1
23
PNP / NPN Triple Diffused Planar Silicon Transistors
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1669-Q | 12 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SB1136 | 12 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB1136-R | 12 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1669Q | 12 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1669S | 12 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1133R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 |
| 2SB1133S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 |
| 2SB1134 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1134_1 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:50V/5A Switching Applications |
| 2SB1134Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220VAR |
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