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參數資料
| 型號： | 2SB1140-S |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-89, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 76K |
| 代理商： | 2SB1140-S |
2SB1140
PNP
Plastic-Encapsulate
Transistors
Features
Power dissipation: PCM = 0.5W(Tamb=25 )
Collector current: ICM = -2A
Collector-base voltage: V(BR)CBO = -50V
Operating and storage junction temperature range
TJ, Tstg: -55
to + 150
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Unit
VCEO
Collector-Emitter Breakdown Voltage
(IC=-1000
A, IB=0)
-50
---
V
VCBO
Collector-Base Breakdown Voltage
(IC=-10
A, IE=0)
-50
---
V
VEBO
Emitter-Base Voltage
(IE=-10
A, IC=0)
-5.0
---
V
ICBO
Collector Cut-off Current
(VCB=-50V, IE=0)
---
-1.0
A
IEBO
Emitter Cut-off Current
(VEB=-5V, IC=0)
---
-1.0
A
hFE1
DC Current Gain
(VCE=-2V, IC=-0.2A)
120
---
340
---
hFE2
DC Current Gain
(VCE=-2V, IC=-1A)
60
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-1A, IB=-50mA)
---
-0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-1A, IB=-50mA)
---
-1.2
V
fT
Transition Frequency
(VCE=-10Vdc, IC=50mAdc, f=200MHz)
---
80
---
MHz
Cob
Collector output capacitance
(VCB=-10V, IE=0, f=1MHz)
---
80
PF
CLASSIFICATION OF hFE
Rank
R
S
Range
120-240
170-340
Marking
1L