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參數資料
| 型號： | 2SB1188-P |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 237K |
| 代理商： | 2SB1188-P |
PNP
Plastic-Encapsulate
Transistors
Features
Power dissipation: PCM = 0.5W(Tamb=25 )
Collector current: ICM = -2A
Collector-base voltage: V(BR)CBO = -40V
Operating and storage junction temperature range
TJ, Tstg: -55
to + 150
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Unit
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50
A, IE=0)
-40
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector cut-off Current
(VCB=-20V, IE=0)
---
-1.0
IEBO
Emitter cut-off Current
(VEB=-4V, IC=0)
---
-1.0
hFE
DC current gain *
(VCE=-3V, IC=-0.5A)
82
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage*
(IC=-2A, IB=-0.2A)
---
-0.8
fT
Transition Frequency
(VCE=-5.0Vdc, IC=-0.5Adc,F=30MHZ)
Cob
output capacitance
(VCB=-10V, IE=0, f=1MHz)
---
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
BCP
BCQ
BCR