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參數(shù)資料
| 型號： | 2SB1220T |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 235K |
| 代理商： | 2SB1220T |
Transistors
1
Publication date: March 2003
SJC00073BED
2SB1220
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821
■ Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
150
V
Collector-emitter voltage (Base open)
VCEO
150
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Marking Symbol: I
2.1
±
0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0
to
0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5°
10
°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
150
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 100 V, I
E
= 0
1
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 10 mA
130
450
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
1V
Transition frequency
fT
VCB
= 10 V, I
E
= 10 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
4
pF
(Common base, input open circuited)
Noixe voltage
NV
VCE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
150
mV
Rg = 100 k, Function = FLAT
Rank
R
S
T
hFE
130 to 220
185 to 330
260 to 450
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB12210QA | 功能描述:TRANS PNP 200VCEO 70MA TO-92NL RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1221-Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1223 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220ML -70V -4A 20W BCE |
| 2SB1224 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220ML -70V -7A 25W BCE |
| 2SB1226 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220ML -110V -3A 20W BCE |
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