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參數資料
| 型號： | 2SB1239T146 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ATV, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SB1239T146 |
2SB1183 / 2SB1239
Transistors
Rev.A
1/2
Power transistor (
40V, 2A)
2SB1183 / 2SB1239
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SD1759 / 2SD1861.
Equivalent circuit
RBE
4k
C
B
E
C
B
E
: Collector
: Base
: Emitter
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCER
VEBO
IC
PC
Tj
Tstg
Limits
40
5
2
1
10
2SB1183
2SB1239
150
55 to +150
Unit
V
A(DC)
3
1
2
A(Pulse)
W
W(Tc
=25°C)
1W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw=10ms
2 Printed circuit board 1.7 mm thick, collector plating 100mm2 or larger.
External dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SB1183
ROHM : CPT3
EIAJ : SC-63
2SB1239
ROHM : ATV
Packaging specifications and hFE
Type
2SB1183
CPT3
1k~200k
TL
2500
2SB1239
ATV
1k~
T146
2500
Package
hFE
Code
Basic ordering unit (pieces)
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
hFE
Pulse test
2SB1183
2SB1239
Cob
40
5
1000
0.8
11
1
1.5
200000
V
A
V
pF
IC
=50A
IC
=1mA, RBE=10k
IE
=50A
VCB
=24V
VEB
=4V
IC/IB
=0.6A/1.2mA
VCE/IC
=3V/0.5A
1000
VCB
=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Output capacitance
fT
150
MHz
VCE
=6V, IE=0.1A, f=1MHz
Transition frequency
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1239TV2 | 功能描述:達林頓晶體管 DARL PNP 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SB1240 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, SIP |
| 2SB1240PRTV6 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1240TV2P | 功能描述:兩極晶體管 - BJT DRIVER PNP 32V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1240TV2Q | 功能描述:兩極晶體管 - BJT DRIVER PNP 32V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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