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參數資料
型號: 2SB1250P
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220, FULL PACK-3
文件頁數: 1/4頁
文件大小: 193K
代理商: 2SB1250P
1
Power Transistors
2SB1250
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1890
s Features
q
Optimum for 25W HiFi output
q
High foward current transfer ratio hFE: 5000 to 30000
q
Low collector to emitter saturation voltage VCE(sat): < –2.5V
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–100
–80
–5
–6
–3
35
2
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –100V, IE = 0
VCE = –80V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –2A
IC = –2A, IB = –2mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A, IB1 = –2mA, IB2 = 2mA,
VCC = –50V
min
–80
2000
5000
typ
20
2.0
0.7
max
–100
30000
–2.5
–3.0
Unit
A
V
MHz
s
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
B
C
E
*h
FE2 Rank classification
Rank
Q
P
hFE2
5000 to 15000 8000 to 30000
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數
參數描述
2SB12520Q 功能描述:TRANS PNP 100VCEO 5A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
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