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參數(shù)資料
| 型號(hào)： | 2SB1257 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）) |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, FM20, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 26K |
| 代理商： | 2SB1257 |
38
Darlington
2S B1257
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1257
–60
–60
–6
–4(
Pulse
–6)
–1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1257
–10
max
–10
max
–60
min
2000
min
–1.5
max
–2
max
150
typ
75
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=–60V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–3A
I
C
=–3A, I
B
=–6mA
I
C
=–3A, I
B
=–6mA
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(
)
10
I
C
(A)
–3
V
(V)
5
I
(mA)
10
t
on
(
μ
s)
0.4typ
t
stg
(
μ
s)
0.8typ
t
f
(
μ
s)
0.6typ
I
(mA)
–10
V
(V)
–10
External Dimensions
FM20(TO220F)
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2014)
Application :
Driver for Solenoid, Relay and Motor and General Purpose
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
0
–2
–1
–4
–3
–6
–5
–2
–6
–4
–1
Collector-Emitter Voltage V
CE
(V)
–5
–3
C
C
(
I
B
=23mA
–1.8mA
–1.5mA
–1.2mA
–0.8mA
–1.0mA
–0.02
–0.1
–1
–0.5
–6
–5
Collector Current I
C
(A)
D
F
(V
CE
=–2V)
100
500
20
50
1000
8000
5000
Typ
0.7
5
1
1
10
100
1000
Time t(ms)
T
θ
j
(
0.05
0.1
0.5
1
4
120
80
0
40
200
240
160
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
–10
–5
–3
–70
–0.07
–1
–0.5
–0.1
–10
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
10ms
1m
Without Heatsink
Natural Cooling
–0.6
–3
–2
–1
–0.2
–1
Base Current I
B
(mA)
–0.5
–10
–5
–50
C
C
(
–2A
–3A
I
C
=–1A
0
–4
–2
–3
–1
0
–2.2
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–2V)
1(sTp
2 se)
–CaTp
(V
CE
=–2V)
–0.02
–0.1
–0.05
–0.5
–6
–5
–1
20
100
50
5000
500
1000
8000
Collector Current I
C
(A)
D
F
25C
–30C
125C
25
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
150x150x2
50x50x2
100x
100x2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
B
C
E
(2k
)(650
)
Equivalent circuit
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