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參數資料
型號: 2SB1268-Q
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 功率晶體管
英文描述: 5 A, 50 V, PNP, Si, POWER TRANSISTOR
封裝: TO-220MF, 3 PIN
文件頁數: 1/4頁
文件大小: 41K
代理商: 2SB1268-Q
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applicatons
Ordering number:ENN2264B
2SB1268/2SD1904
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11504TN (KT)/O1598HA (KT)/D251MH/3309TA/4177TA, TS No.2264–1/4
Package Dimensions
unit:mm
2049C
[2SB1268/2SD1904]
C
Electrical Characteristics at Ta = 25C
Applications
Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Features
Suitable for sets whose height is restricted.
Low collector to emitter saturation voltage.
( ) : 2SB1268
Specifications
Absolute Maximum Ratings at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220MF
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Continued on next page.
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相關PDF資料
PDF描述
2SB1268S 5 A, 50 V, PNP, Si, POWER TRANSISTOR
2SD1904R 5 A, 50 V, NPN, Si, POWER TRANSISTOR
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相關代理商/技術參數
參數描述
2SB1268R-E 制造商:ON Semiconductor 功能描述:
2SB1269R-E 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 7A TO-220MF
2SB1274 制造商:n/a 功能描述:2SB1274 N9H1D
2SB1274R 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SB1274S 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
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