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參數資料
| 型號： | 2SB1275 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor (−160V , −1.5A) |
| 文件頁數： | 1/4頁 |
| 文件大小： | 84K |
| 代理商： | 2SB1275 |
2SB1275 / 2SB1236A
Transistors
Rev.A
1/3
Power Transistor (
160V ,
1.5A)
2SB1275 / 2SB1236A
z
Features
1) High breakdown voltage.(BV
CEO
=
160V)
2) Low collector output capacitance.
(Typ. 30pF at V
CB
=
10V)
3) High transition frequency.(f
T
=
50MH
Z
)
4) Complements the 2SD1918 / 2SD1857A.
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
160
160
5
1.5
3
1
1
150
55
～+
150
Unit
V
V
V
A(DC)
A(Pulse)
2
1
W(Tc
=
25
°
C)
W
°
C
10
2SB1275
2SB1236A
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw
=
100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
z
Packaging specifications and h
FE
z
External dimensions
(Unit : mm)
EIAJ : SC-63
ROHM : CPT3
ROHM : ATV
2SB1236A
2SB1275
0.45
(2) Collector
(3) Base
1.05
Taping specifications
(1) Emitter
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1
1
0
4
2.5
2
0
1
0
9.5
2.5
0.8Min.
1.5
6
2
(
(
C0.5
0
0.9
(
0
2
0
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
5
Type
Package
h
FE
Code
2SB1275
CPT3
P
TL
2500
2SB1236A
ATV
PQ
TV2
2500
Basic ordering unit (pieces)
z
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
Min.
160
160
5
82
Typ.
Max.
1
1
2
180
Unit
V
Conditions
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
50
30
V
V
μ
A
μ
A
V
MHz
pF
h
FE
82
270
2SB1275
2SB1236A
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
120V
V
EB
=
4V
I
C
/I
B
=
1A/
0.1A
V
CE
=
5V , I
C
=
0.1A
V
CE
=
5V , I
E
=
0.1A , f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
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