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參數資料
| 型號： | 2SB1288 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency power amplification) |
| 中文描述： | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92L-A1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SB1288 |
1
Transistor
2SB1288
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Large collector current I
C
.
G
Allowing supply with the radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0
±
0.2
1
±
0
0
±
0
8
±
0
1.27
1
2
3
1.27
4.0
±
0.2
0.45
+0.15
–0.1
0.45
+0.15
–0.1
2
±
0
0.7
±
0.1
2.54
±
0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–7
–10
–5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= –2A
*2
I
C
= –3A, I
B
= –0.1A
*2
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
min
–20
–7
90
typ
120
max
–100
–100
625
–1
85
Unit
nA
nA
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank
P
Q
R
h
FE
90 ~ 135
120 ~ 205
180 ~ 625
*2
Pulse measurement
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| 2SB1314 | FOR LOW FREQUENCY POWER AMPLIFY APPLICATION |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1290 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1295 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORSC-59 -15V -.8A .2WSURFACE MOUNT |
| 2SB12990P | 功能描述:TRANS PNP 60VCEO 3A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1299P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1301-T2 | 制造商:NEC Electronics Corporation 功能描述: |
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