- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33338 > 2SB1322Q (PANASONIC CORP) 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SB1322Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 246K |
| 代理商： | 2SB1322Q |
Power Transistors
Publication date : October 2008
SJD00351AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1322
Silicon PNP epitaxial planar type
For low frequency power amplication
Complementary to 2SD1994
Features
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–30
V
Collector-emitter voltage (Base open)
VCEO
–25
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
–1
A
Peak collector current
ICP
–1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 mA, IE = 0
–30
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–25
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 mA, IC = 0
–5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
– 0.1
m
A
Forward current transfer ratio *1
hFE1*2 VCE = –10 V, IC = –500 mA
85
340
hFE2
VCE = –5 V, IC = –1 mA
50
Collector-emitter saturation voltage *1
VCE(sat) IC = –500 mA, IB = –50 mA
– 0.4
V
Base-emitter saturation voltage *1
VBE(sat) IC = –500 mA, IB = –50 mA
–1.2
V
Transition frequency
fT
VCB = –10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = –10 V, IE = 0, f = 1 MHz
20
30
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classication
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Package
Code
MT-2-A1
Pin Name
1. Emitter
2. Collector
3. Base
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1330T105R | 0.7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1330T105/Q | 0.7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1330T105P | 0.7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1353T114E | 1.5 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SB1353T114/E | 1.5 A, 120 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1324-TD-E | 制造商:SANYO 功能描述:omo 30V 3A 70 to PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 30V 3A SOT89 制造商:Sanyo 功能描述:0 |
| 2SB1325-TD-E | 制造商:SANYO 功能描述:omo 20V 4A 70 to PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 20V 4A SOT89 制造商:Sanyo 功能描述:0 |
| 2SB1326TV2Q | 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1326TV2R | 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1333 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。