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參數(shù)資料
| 型號(hào)： | 2SB1430 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | 進(jìn)步黨硅外延晶體管（達(dá)林頓接線）低頻功率放大器和低速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 115K |
| 代理商： | 2SB1430 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D13660EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1430
PNP SILICON
EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The 2SB1430 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, this transistor features a small resin-molded
insulation type package, thus contributing to high-density mounting
and mounting cost reduction.
FEATURES
High h
FE
due to Darlington connection:
h
FE
≥
2,000 (V
CE
= 2 V, I
C
= 2 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
*
10
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
(T
C
= 25
°
C)
20
W
Total power dissipation
P
T
(T
A
= 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1430K | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SB1430L | TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SB1430M | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SB1432 | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SB1449 | 50V/5A Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1430-AZ-L | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB1431-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,100V,8.0A,isoTO-220 制造商:Renesas 功能描述:Trans Darlington PNP 100V 8A 3-Pin(3+Tab) TO-220 Isolated |
| 2SB1431-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB1431-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1432-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,100V,10A,isoTO-220 制造商:Renesas 功能描述:Trans Darlington PNP 100V 10A 3-Pin(3+Tab) TO-220 Isolated |
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