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參數資料
| 型號： | 2SB1529 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TOP3L, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 172K |
| 代理商： | 2SB1529 |
1
Power Transistors
2SB1529
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2328
s Features
q
Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q
Wide area of safe operation (ASO)
q
High transition frequency fT
q
Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–180
–5
–25
–15
150
3.5
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = –180V, IE = 0
VEB = –3V, IC = 0
VCE = –5V, IC = –20mA
VCE = –5V, IC = –1A
VCE = –5V, IC = –8A
IC = –10A, IB = –1A
VCE = –5V, IC = – 0.5A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
min
20
60
20
typ
45
530
max
–50
200
–1.8
–2.5
Unit
A
V
MHz
pF
TC=25°C
Ta=25
°C
*h
FE2 Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
6.0
10.0
26.0
±0.5
20.0
±0.5
1.5
2.5
Solder
Dip
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
4.0
2.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
2.0
φ 3.3±0.2
3.0
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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| 2SB1529S | 15 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 2SB1529P | 15 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 2SB1531P | 6 A, 110 V, PNP, Si, POWER TRANSISTOR |
| 2SB1538 | 1000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1548 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUBBING WITH 2SB1548A-P |
| 2SB1548A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548AP | 功能描述:TRANS PNP LF 80VCEO 3A TO-220D RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1548A-P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548PQAU | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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