- 您現在的位置：買賣IC網 > PDF目錄371489 > 2SB1548A (PANASONIC CORP) Silicon PNP epitaxial planar type(For power amplification) PDF資料下載
參數資料
| 型號： | 2SB1548A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, FULL PACK-3 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SB1548A |
1
Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
I
Features
G
High forward current transfer ratio h
FE
which has satisfactory linearity
G
Low collector to emitter saturation voltage V
CE(sat)
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the rank classification.
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9
±
0.3
1
±
0
1
±
0
4
±
0
4.6
±
0.2
2.9
±
0.2
0.8
±
0.1
1.4
±
0.2
1.6
±
0.2
2
3
φ
3.2
±
0.1
2.6
±
0.1
0.55
±
0.15
2.54
±
0.3
5.08
±
0.5
3
±
0
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–5
–5
–3
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB1548
2SB1548A
2SB1548
2SB1548A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –3A, I
B
= – 0.375A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –1A, I
B1
= – 0.1A, I
B2
= 0.1A
min
–60
–80
70
10
typ
30
0.5
1.2
0.3
max
–200
–200
–300
–300
–1
250
–1.8
–1.2
Unit
μ
A
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SB1548
2SB1548A
2SB1548
2SB1548A
2SB1548
2SB1548A
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB1553 | Silicon PNP epitaxial planar type(For power amplification) |
| 2SB1554 | Silicon PNP epitaxial planar type(For power amplification) |
| 2SB1555 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SB1556 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SB1557 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1548AP | 功能描述:TRANS PNP LF 80VCEO 3A TO-220D RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1548A-P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548PQAU | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1558-A | 制造商:Toshiba America Electronic Components 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。