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參數(shù)資料
| 型號(hào)： | 2SB1568 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor (−80V, −4A) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 78K |
| 代理商： | 2SB1568 |
2SB1568
Transistors
Power Transistor (
80V,
4A)
Rev.A
1/3
2SB1568
z
Features
1) Available in TO-220 FN package
2) Darling connection provides high
dc current gain (h
FE
)
3) Damper diode is incorporated
4) Built in resistors between base and
emitter
5) Two millimeters lower than TO-220 FP
which allows higher density mounting
6) Complementary pair with 2SD2399
z
Applications
Power amplifler
z
Absolute maximum rating
(Ta=25
°
C)
z
Equivalent circuit
z
External dimensions
(Unit : mm)
ROHM : TO-220FN
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Sourse)
4.5
2.8
0.75
φ
3.2
(2) (3)
(1)
0.8
2.54
2.6
2.54
1.3
1.2
1
1
8
5
10.0
1
C
B
E
B
C
E
: Base
: Collector
: Emitter
R
1
R
2
R
1
3k
=
=
R
2
300
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
2
6
P
C
Tstg
Limits
80
80
7
4
55 to
+
150
Unit
V
V
V
A(DC)
A(Pulse)
W(Ta=25
°
C)
W(Tc=25
°
C)
°
C
°
C
Collector
-
base voltage
Collector
-
emitter voltage
Emitter
-
base voltage
Collector dissipation
Storage temperature
Collector current
Tj
150
Junction temperature
30
z
Electrical characteristics
(unless otherwise noted, Ta=25
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
80
80
7
1000
5000
1.0
35
12
100
3
3
10000
1.5
V
V
V
μ
A
mV
V
MHz
pF
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
5mA
V
CB
=
80V
V
EB
=
5V
V
CE
=
3V, I
C
=
2A
I
C
/I
B
=
2A/
4mA
V
CE
=
5V, I
E
=
0.5A, f
=
10MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Cob
Collector
base
breakdown voltage
Collector
emitter
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector
emitter
breakdown voltage
Collector
emitter
saturation voltage
Transition frequency
Output capacitance
1 Measured using pulse current.
2 Transition frequency of the device.
1
1
1
2
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