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參數資料
| 型號： | 2SB1574 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-frequency output amplification) |
| 中文描述： | 2 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, U-G2, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 28K |
| 代理商： | 2SB1574 |
1
Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
For low-frequency output amplification
I
Features
G
Possible to solder radiation fin directly to printed cicuit boad
G
Type with universal characteristics
G
Collector breakdown voltage: V
CBO
/V
CEO
= –50V
G
Collector current: I
C
= –2A
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25
°
C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–50
–50
–5
–3
–2
10
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
*
h
FE1
Rank classification
Rank
R
S
h
FE1
120 to 240
170 to 340
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= –200mA
V
CE
= –2V, I
C
= –1A
I
C
= –1A, I
B
= –50mA
I
C
= –1A, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–50
–50
–5
120
60
typ
– 0.2
– 0.85
80
45
max
– 0.1
340
– 0.3
–1.2
60
Unit
μ
A
V
V
V
V
V
MHz
pF
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
6.5
±
0.1
5.3
±
0.1
4.35
±
0.1
4.6
±
0.1
2.3
±
0.1
0.75
±
0.1
1
2
3
0.93
±
0.1
2
±
0
0
1
±
0
7
±
0
1
±
0
2.3
±
0.1
0.5
±
0.1
0.5
±
0.1
0.1
±
0.05
1.0
±
0.1
6.5
±
0.2
5.35
4.35
2.3
1
±
0
2
±
0
5
±
0
6
1
0.75
0.6
3
2.3
2
1
0.5
±
0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Unit: mm
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相關代理商/技術參數 |
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| 2SB157400L | 功能描述:TRANS PNP 50VCEO 2A U-G2 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1578-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 60V 5A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SB1578-T1-AZ-GB1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1578-T1-AZ-GB2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1580 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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