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參數資料
| 型號： | 2SB1578GB1 |
| 廠商： | NEC Corp. |
| 英文描述： | 3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 5A條一（c）|至243VAR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 129K |
| 代理商： | 2SB1578GB1 |
2002
Document No. D16147EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SB1578
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SB1578 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
FEATURES
New package with dimensions in between those of small signal
and power signal package
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SD2425
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
6.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
PW
≤
10 ms, duty cycle
≤
50 %
7.0
A
Base current (DC)
I
B(DC)
1.0
A
Total power dissipation
P
T
7.5 cm
2
×
0.7 mm ceramic board used
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
Electrode connection
1: Emitter
2: Collector
3: Base
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB1578GB2 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-243VAR |
| 2SB1578GB3 | 3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits |
| 2SB1624 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達林頓）) |
| 2SB1625 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達林頓）) |
| 2SB1626 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達林頓）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1578-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 60V 5A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SB1578-T1-AZ-GB1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1578-T1-AZ-GB2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1580 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1580T100 | 功能描述:達林頓晶體管 DARL PNP 100V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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