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參數資料
| 型號： | 2SB1603A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 中文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SB1603A |
1
Power Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
High-speed switching
G
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–40
–50
–20
–40
–5
–8
–4
25
2
150
–55 to +150
2SB1603
2SB1603A
2SB1603
2SB1603A
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±
0.3
2
3
1
4.6
±
0.2
2.9
±
0.2
2.6
±
0.1
2.54
±
0.2
5.08
±
0.4
0.75
±
0.1
1.2
±
0.15
1.45
±
0.15
1
±
0
1
+
–
φ
3.2
±
0.1
3
±
0
8
±
0
4
±
0
S
0.7
±
0.1
7
°
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –40V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –1A
I
C
= –2A, I
B
= – 0.1A
I
C
= –2A, I
B
= – 0.1A
V
CE
= –5V, I
C
= – 0.5A, f = 10MHz
I
C
= –2A, I
B1
= – 0.2A, I
B2
= 0.2A
min
–20
–40
45
90
typ
150
0.3
0.4
0.1
max
–50
–50
260
– 0.5
–1.5
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
2SB1603
2SB1603A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
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