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參數(shù)資料
型號(hào): 2SB1606
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For power switching)
中文描述: 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220E
封裝: TO-220E, FULL PACK-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 173K
代理商: 2SB1606
1
Power Transistors
2SB1606
Silicon PNP epitaxial planar type
For power switching
s Features
q
Low collector to emitter saturation voltage VCE(sat)
q
Satisfactory linearity of foward current transfer ratio hFE
q
Large collector current IC
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
15.0
±0.3
13.7
+0.5
–0.2
φ3.2±0.1
3.0
±0.2
8.0
±0.2
4.1
±0.2
Solder
Dip
1.45
±0.15
0.7
±0.1
7
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–130
–80
–7
–10
–5
40
2
150
–55 to +150
Unit
V
A
W
C
TC=25°C
Ta=25
°C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –4A, IB = – 0.2A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –2A, IB1 = – 0.2A, IB2 = 0.2A
min
–80
45
90
typ
30
0.13
0.5
0.13
max
–10
–50
260
– 0.5
–1.5
Unit
A
V
MHz
s
*h
FE2 Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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