欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SB1606P
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 5 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: TO-220E, FULL PACK-3
文件頁數: 1/4頁
文件大小: 173K
代理商: 2SB1606P
1
Power Transistors
2SB1606
Silicon PNP epitaxial planar type
For power switching
s Features
q
Low collector to emitter saturation voltage VCE(sat)
q
Satisfactory linearity of foward current transfer ratio hFE
q
Large collector current IC
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
15.0
±0.3
13.7
+0.5
–0.2
φ3.2±0.1
3.0
±0.2
8.0
±0.2
4.1
±0.2
Solder
Dip
1.45
±0.15
0.7
±0.1
7
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–130
–80
–7
–10
–5
40
2
150
–55 to +150
Unit
V
A
W
C
TC=25°C
Ta=25
°C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –4A, IB = – 0.2A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –2A, IB1 = – 0.2A, IB2 = 0.2A
min
–80
45
90
typ
30
0.13
0.5
0.13
max
–10
–50
260
– 0.5
–1.5
Unit
A
V
MHz
s
*h
FE2 Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
相關PDF資料
PDF描述
2SB1617 2 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1623Q 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB1624-U 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SB1628-ZX 3 A, 16 V, PNP, Si, POWER TRANSISTOR
2SB1628-ZZ 3 A, 16 V, PNP, Si, POWER TRANSISTOR
相關代理商/技術參數
參數描述
2SB1617(TP,Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape
2SB1623AP 功能描述:TRANS PNP 80VCEO 4A TO-220D RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SB1625 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM100-110V -6A 60W BCE
2SB1628-T1-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,16V,3.0A,P-MINI MOLD3 制造商:Renesas 功能描述:Trans GP BJT PNP 16V 3A 4-Pin(3+Tab) SC-62 T/R
2SB1628-T1-AZ-ZZ 制造商:Renesas Electronics Corporation 功能描述:
主站蜘蛛池模板: 枣阳市| 从江县| 乌审旗| 高雄市| 漯河市| 永州市| 达孜县| 济阳县| 祁东县| 花莲县| 韩城市| 桃江县| 五大连池市| 舒兰市| 隆尧县| 平舆县| 隆化县| 宁陵县| 抚宁县| 高邮市| 静宁县| 行唐县| 苍山县| 汕尾市| 元氏县| 伽师县| 泰兴市| 宁都县| 浠水县| 光山县| 商丘市| 界首市| 台前县| 清流县| 高碑店市| 堆龙德庆县| 芜湖县| 石景山区| 改则县| 邳州市| 教育|