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參數(shù)資料
| 型號(hào)： | 2SB1629P |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 173K |
| 代理商： | 2SB1629P |
1
Power Transistors
2SB1629
Silicon PNP epitaxial planar type
For power amplification
s Features
q
High foward current transfer ratio hFE
q
Satisfactory linearity of foward current transfer ratio hFE
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
–60
–6
–3
–1
40
2
150
–55 to +150
Unit
V
A
W
C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
ICEO
IEBO
VCEO
hFE
*
VCE(sat)
fT
Conditions
VCB = –60V, IE = 0
VEB = –40V, IB = 0
VEB = –6V, IC = 0
IC = –25mA, IB = 0
VCE = –4V, IC = – 0.5A
IC = –2A, IB = – 0.05A
VCE = –12V, IC = – 0.2A, f = 10MHz
min
–60
300
typ
30
max
–100
700
–1
Unit
A
V
MHz
*h
FE Rank classification
Rank
Q
P
hFE
300 to 500
400 to 700
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
15.0
±0.3
13.7
+0.5
–0.2
φ3.2±0.1
3.0
±0.2
8.0
±0.2
4.1
±0.2
Solder
Dip
1.45
±0.15
0.7
±0.1
7
°
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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