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參數資料
| 型號： | 2SB1724Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 210K |
| 代理商： | 2SB1724Q |
Power Transistors
1
Publication date: January 2005
SJD00323BED
2SB1724, 2SB1724A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2693 and 2SD2693A
■ Features
Wide safe operation area
Satisfactory linearity of forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder
Dip
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB1724
VCBO
60
V
(Emitter open)
2SB1724A
80
Collector-emitter voltage
2SB1724
VCEO
60
V
(Base open)
2SB1724A
80
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
5A
Collector power dissipation
PC
30
W
Ta
= 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB1724
VCEO
IC
= 30 mA, I
B
= 0
60
V
(Base open)
2SB1724A
80
Collector-base cutoff
2SB1724
ICBO
VCB = 60 V, IE = 0
100
A
current (Emitter open)
2SB1724A
VCB
= 80 V, I
E
= 0
Collector-emitter cutoff
2SB1724
ICEO
VCE = 60 V, IB = 0
100
A
current (Base open)
2SB1724A
VCE = 80 V, IB = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 6 V, I
C
= 0
1mA
Forward current transfer ratio *
1
hFE1 *
2
VCE = 4 V, IC = 1 A
70
250
hFE2
VCE = 4 V, IC = 3 A
10
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 3 A, I
B
= 0.375 A
0.8
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, Resistance loaded
0.15
s
Storage time
tstg
IB1
= 0.1 A, I
B2
= 0.1 A
0.8
s
Fall time
tf
VCC = 50 V
0.2
s
Rank
Q
P
hFE1
70 to 150
120 to 250
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Internal Connection
B
C
E
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SB1730TL | 功能描述:兩極晶體管 - BJT PNP 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| 2SB1732TL | 功能描述:兩極晶體管 - BJT 12V 1.5A PNP LOW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1733TL | 功能描述:兩極晶體管 - BJT 30V 1A PNP LOW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB176 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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