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參數資料
| 型號： | 2SB435 |
| 廠商： | Toshiba Corporation |
| 英文描述： | SILICON PNP TRANSISTOR |
| 中文描述： | 硅PNP晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 69K |
| 代理商： | 2SB435 |
2SB435
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
!
Complement to 2SD235
ABSOLUTE MAXIMUM RATINGS (T
A
=25
TO-220
℃
)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25
℃
)
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
-50
-40
-5
-3
25
150
-50~150
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
A
=25
℃
)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
I
CBO
I
EBO
h
FE1
V
CE(sat)
f
T
V
CB
= -50V , I
E
=0
V
EB
= -5V , I
C
=
0
V
CE
= -5V , I
C
=-0.5A
I
C
=-3A , I
B
=-0.3A
V
CE
= -2V , I
C
=-0.5A
40
18
-10
10
240
-1.0
μ
A
μ
A
V
MHZ
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB514 | 50V/2A Low-Frequency Power Amp Applications |
| 2SD330 | 50V/2A Low-Frequency Power Amp Applications |
| 2sb544 | Low-Frequency Power Amp, Electronic Governor Applications |
| 2sd400 | Low-Frequency Power Amp, Electronic Governor Applications |
| 2SD400D | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB435G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB449 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB457A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -32V -.5A .15W |
| 2SB462 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-66 -60V -2A 6W BEC |
| 2SB463 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-66-32V -2A 6W BEC |
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