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參數(shù)資料
| 型號(hào)： | 2SB562C |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC TO-92L, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 219K |
| 代理商： | 2SB562C |
Features
x
Low Frequency Power Amplifier.
x
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
2SB562
PNP Epitaxial
Silicon Transistor
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-20
V
VCBO
Collector-Base Voltage
-25
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-1.0
A
PC
Collector power dissipation
0.9
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
(IC=-10
Adc, IE=0)
-20
---
Vdc
BVCEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
-25
---
Vdc
BVEBO
Emitter-Base Breakdown Voltage
(IE=-0.01mAdc, IC=0)
-5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-20Vdc,IE=0)
---
-1000
nAdc
IEBO
Emitter Cutoff Current
(VEB=-4.0Vdc, IC=0)
---
-1000
nAdc
ON CHARACTERISTICS
hFE
DC Current gain
(IC=500mAdc, VCE=2.0Vdc)
85
---
240
---
VBE(on)
Base-Emitter On Voltage
(VCE=-2.0Vdc, IC=-500mAdc)
---
-1.0
Vdc
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-0.8Adc, IB=-80mAdc)
---
-0.5
Vdc
fT
Current Gain Bandwidth Product
(VCE=-2.0Vdc, IC=-500mAdc)
---
350
---
MHz
Cob
Output Capacitance
(VCB=-10Vdc, IE=0, f=1.0MHz)
---
38
---
pF
(1) hFE Classification B: 85~170, C: 120~240
TO-92L
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision:
1
200
9/04/24
TM
Micro Commercial Components
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0 and MSL Rating 1
www.mccsemi.com
1 of
4
Complementary pair with 2SD468
BC
E
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.146
.161
B
.157
---
D
.014
.018
E
.050
.062
F
.185
.201
G
.307
.323
H
.543
.559
J
.024
.031
K
.014
.022
L
.050
M
.096
.104
3.700
4.10
4.000
---
C
---
0.063
---
1.600
0.350
0.450
1.280
1.580
4.700
5.100
7.800
8.200
13.80
14.20
.600
.800
0.350
.550
1.270
2.440
2.640
DIMENSIONS
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| 2SB562 | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB562CTZ-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB563 | 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB564 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SP-8 -30V -1A 1W ECB 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SB564A | 制造商:DCCOM 制造商全稱(chēng):Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
| 2SB564-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP Bulk |
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