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參數(shù)資料
| 型號(hào)： | 2SB566 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Power Bipolar Transistors |
| 中文描述： | 功率雙極晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 33K |
| 代理商： | 2SB566 |
2SB566(K), 2SB566A(K)
Silicon PNP Triple Diffused
Application
Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
123
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
2SB566(K)
2SB566A(K)
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
–70
–70
V
Collector to emitter voltage
–50
–60
V
Emitter to base voltage
–5
–5
V
Collector current
–4
–4
A
Collector peak current
–8
–8
A
Collector power dissipation
40
40
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C.
Tstg
–55 to +150
–55 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB566A | Power Bipolar Transistors |
| 2SB632 | PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V，2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管) |
| 2SB646 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
| 2SB646A | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
| 2SB648 | Silicon PNP Epitaxial(外延PNP晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB566(K)B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB566(K)C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB566A | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB566A(K)B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
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