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參數資料
| 型號： | 2SB601-L |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 110K |
| 代理商： | 2SB601-L |
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1998
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
FEATURES
High-DC current gain due to Darlington connection
Low collector saturation voltage
Low collector cutoff current
Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current
IC(DC)
–
+5.0
A
Collector current
IC(pulse)*
–
+8.0
A
Base current
IB(DC)
0.5
A
Total power dissipation
PT (Ta = 25
°C)
1.5
W
Total power dissipation
PT (Tc = 25
°C)
30
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
(/(&752'(
&211(&7,21
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| 2SB624BV4-T1B-A | 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB601-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB601M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB605 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON TRANSISTOR |
| 2SB605-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB605K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | SPAKVAR |
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