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參數(shù)資料
| 型號： | 2SB601 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | 進步黨硅外延晶體管（達林頓接線）低頻功率放大器和低速開關 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 110K |
| 代理商： | 2SB601 |
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confirm that this is the latest version.
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2002
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
FEATURES
High-DC current gain due to Darlington connection
Low collector saturation voltage
Low collector cutoff current
Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
–5.0
V
Collector current
I
C(DC)
A
Collector current
I
C(pulse)
*
–8.0
A
Base current
I
B(DC)
0.5
A
Total power dissipation
P
T
(Ta = 25
°
C)
1.5
W
Total power dissipation
P
T
(Tc = 25
°
C)
30
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
PACKAGE DRAWING (UNIT: mm)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB601-AZ-M | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB601K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB601-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB601L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB601-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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