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參數資料
| 型號： | 2SB624ABV5 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 245K |
| 代理商： | 2SB624ABV5 |
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SILICON TRANSISTOR
2SB624A
AUDIO FREQUENCY POWER AMPLIFIER
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D18029EJ1V0DS00 (1st edition)
Date Published April 2006 NS CP(K)
Printed in Japan
c
2006
PACKAGE DRAWING
(Unit: mm)
FEATURES
Complementary to NEC 2SD596A NPN Transistor.
High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
700
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cut-off Current
ICBO
100
nA
VCB =
30 V, IE = 0 A
Emitter Cut-off Current
IEBO
100
nA
VEB =
5.0 V, IC = 0 A
hFE1
110
200
400
VCE =
1.0 V, IC = 100 mA Note
DC Current Gain
hFE2
50
VCE =
1.0 V, IC = 700 mA Note
Collector Saturation Voltage
VCE(sat)
0.25
0.6
V
IC =
700 mA, IB = 70 mA Note
Base to Emitter Voltage
VBE
600
640
700
mV
VCE =
6.0 V, IC = 10 mA Note
Gain Bandwidth Product
fT
160
MHz
VCE =
6.0 V, IE = 10 mA
Output Capacitance
Cob
17
pF
VCB =
6.0 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW
≤ 350
μs, Duty Cycle ≤ 2%
hFE1 CLASSIFICATION
Marking
BV1
BV2
BV3
BV4
BV5
hFE1
110 to 180
135 to 220
170 to 270
200 to 320
250 to 400
1. Emitter
2. Base
3. Collector
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| 2SB624ABV4 | 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB624BV1 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SB624BV2 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SB624BV3 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SB624BV4 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SB624BV5 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
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