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參數(shù)資料
| 型號： | 2SB768M |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
| 封裝： | MP-3Z, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 531K |
| 代理商： | 2SB768M |
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SILICON POWER TRANSISTOR
2SB768
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
DATA SHEET
Document No. D18264EJ4V0DS00 (4th edition)
(Previous No. TC-1625A)
Date Published July 2006 NS CP(K)
Printed in Japan
1985, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SB768 is designed for Color TV Vertical Deflection Output,
especially in Hybrid Integrated Circuits.
FEATURES
High Voltage: VCEO =
150 V
Complement to 2SD1033
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
200
V
Collector to Emitter Voltage
VCEO
150
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC(DC)
2
A
Collector Current (pulse)
Note 1
IC(pulse)
3
A
Total Power Dissipation (TA = 25
°C) Note 2
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB768K | 2000 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
| 2SB772-O-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772-GR-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772-Y-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772-R-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB77 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
| 2SB772 | 功能描述:兩極晶體管 - BJT PNP Medium Power -30VCEO -5VBEO RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB772_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:PNP medium power transistor |
| 2SB772_1111 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB772-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP Power Transistor, 30V, 3.0A, TO-126 制造商:Renesas 功能描述:Trans GP BJT PNP 30V 3A 3-Pin TO-126 |
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