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參數資料
| 型號： | 2SB772-Y |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 2SB772-Y |
2SB772
PNP Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V (BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
30
---
Vdc
V (BR)CBO
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
40
---
Vdc
V (BR)EBO
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
5.0
---
Vdc
I CBO
Collector Cutoff Current
(V CB=40Vdc, IE=0)
---
1.0
uAdc
ICEO
Collector Cutoff Current
(V CE=30Vdc, IB=0)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(V EB=6.0Vdc, IC=0)
---
1.0
uAdc
ON CHARACTERISTICS
h FE(1)
DC Current Gain
(IC=1.0Adc, VCE=2.0Vdc)
60
400
---
h FE(2)
DC Current Gain
(IC=100mAdc, VCE=2.0Vdc)
32
---
V CE(sat)
Collector-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc)
---
0.5
Vdc
V BE(sat)
Base-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc)
---
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
f T
Transistor Frequency
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz)
50
---
MHz
CLASSIFICATION OF HFE (1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400