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參數資料
| 型號： | 2SB772 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | MP-5, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 192K |
| 代理商： | 2SB772 |
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PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DATA SHEET
Document No. D17118EJ3V0DS00 (3rd edition)
Date Published April 2008 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3 W
audio amplifier, voltage regulator, DC-DC converter and relay driver.
FEATURES
Low saturation voltage
VCE(sat)
≤ 0.5 V (IC = 2.0 A, IB = 0.2 A)
Excellent hFE linearity and high hFE
hFE2 = 60 to 400 (VCE =
2.0 V, IC = 1.0 A)
Less cramping space required due to small and thin package (TO-
126 (MP-5)) and reducing the trouble for attachment to a radiator.
No insulator bushing required.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
55 to +150°C
Junction Temperature
150
°C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA = 25
°C)
1.0 W
Total Power Dissipation (TC = 25
°C)
10 W
Maximum Voltages and Currents (TA = 25
°C)
VCBO
Collector to Base Voltage
40 V
VCEO
Collector to Emitter Voltage
30 V
VEBO
Emitter to Base Voltage
5.0 V
IC(DC)
Collector Current (DC)
3.0 A
IC(pulse)
Note Collector Current (pulse)
7.0 A
Note Pulse Test PW
≤ 350
μs, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Current Gain
hFE1
VCE =
2.0 V, IC = 20 mA
Note
30
220
DC Current Gain
hFE2
VCE =
2.0 V, IC = 1.0 A
Note
60
160
400
Gain Bandwidth Product
fT
VCE =
5.0 V, IC = 0.1 A
80
MHz
Output Capacitance
Cob
VCB =
10 V, IE = 0 A, f = 1.0 MHz
55
pF
Collector Cutoff Current
ICBO
VCB =
30 V, IE = 0 A
1.0
μA
Emitter Cutoff Current
IEBO
VEB =
3.0 V, IC = 0 A
1.0
μA
Collector Saturation Voltage
VCE(sat)
IC =
2.0 A, IB = 0.2 A
Note
0.3
0.5
V
Base Saturation Voltage
VBE(sat)
IC =
2.0 A, IB = 0.2 A
Note
1.0
2.0
V
Note Pulse Test: PW
≤ 350
μs, Duty Cycle ≤ 2%
CLASSIFICATION OF hFE2
Rank
R
Q
P
E
Range
60 to 120
100 to 200
160 to 320
200 to 400
Remark Test Conditions: VCE =
2.0 V, IC = 1.0 A
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2±0.2
12 TYP.
2.3 TYP.
1.2 TYP.
0.55
2.5
±0.2
12.0
MAX.
13.0
MIN.
2.8 MAX.
3.8±0.2
0.8
+0.08
–0.05
+0.08
–0.05
12
3
1: Emitter
2: Collector: connected to mounting plane
3: Base
<R>
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB772_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:PNP medium power transistor |
| 2SB772_1111 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB772-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP Power Transistor, 30V, 3.0A, TO-126 制造商:Renesas 功能描述:Trans GP BJT PNP 30V 3A 3-Pin TO-126 |
| 2SB772-AZ(P) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB772AZ-E | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
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