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參數資料
| 型號： | 2SB779R |
| 英文描述： | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-236AB |
| 中文描述： | 晶體管|晶體管|進步黨| 20V的五（巴西）總裁| 500mA的一（c）|至236AB |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 2SB779R |
1
Transistor
2SB0709A (2SB709A)
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD0601A (2SD601A)
I Features
G High foward current transfer ratio hFE.
G Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO–236
2:Emitter
EIAJ:SC–59
3:Collector
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±0.15
0.65
±0.15
3
1
2
0.95
1.9
±
0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4
±0.2
0
to
0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–45
–7
–200
–100
200
150
–55 ~ +150
Unit
V
mA
mW
C
I Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10
A, I
E = 0
IC = –2mA, IB = 0
IE = –10A, IC = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–45
–7
160
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
A
V
MHz
pF
*1h
FE Rank classification
Rank
Q
R
S
hFE
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
BQ
BR
BS
Note.) The Part number in the Parenthesis shows conventional part number.
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