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參數資料
| 型號： | 2SB819R |
| 英文描述： | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 中文描述： | 晶體管|晶體管|進步黨| 40V的五（巴西）總裁| 1.5AI（丙）|律師- 71 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 80K |
| 代理商： | 2SB819R |
Transistors
1
Publication date: January 2003
SJC00061BED
2SB0873 (2SB873)
Silicon PNP epitaxial planar type
For low-frequency power amplification
For DC-DC converter
For stroboscope
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Large collector current I
C
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
10
A
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) The part number in the parenthesis shows conventional part number.
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
5.9±0.2
0.7±0.1
4.9±0.2
8.6
±
0.2
0.7
+0.3 –0.2
13.5
±
0.5
2.54±0.15
(3.2)
(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
13
2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
100
nA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
100
nA
Forward current transfer ratio *
1, 2
hFE
VCE
= 2 V, I
C
= 2 A
90
625
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 3 A, IB = 0.1 A
1V
Transition frequency
fT
VCB = 6 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
85
pF
(Common-emitter reverse transfer)
Rank
P
Q
R
hFE
90 to 135
120 to 205
180 to 625
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
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