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參數(shù)資料
| 型號(hào)： | 2SB856A |
| 英文描述： | Dual/Triple-Voltage µP Supervisory Circuits |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 50V五（巴西）總裁| 3A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB856A |
2SB857, 2SB858
Silicon PNP Triple Diffused
ADE-208-859 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SB857
2SB858
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
–60
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–4
A
Collector peak current
I
C(peak)
–8
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C = 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB857C | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB858C | Dual/Triple-Voltage µP Supervisory Circuits |
| 2SB858D | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859B | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859C | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB856B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB856C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB857 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB857_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
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