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參數資料
| 型號： | 2SB857 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SB857 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 1/3
HSB857
HSMC Product Specification
Description
Low frequency power amplifier.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 40 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current.............................................................................................................. -4 A
IC Collector Current (IC Peak).............................................................................................. -8 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-70
-50
-5
-
-
-
35
60
-
Typ.
-
-
-
-
-
-
-
-
15
Max.
-
-
-
-1
-1
-1
-
320
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA, IE=0
IC=-50mA, IB=0
IE=-10uA, IC=0
VCB=-50V, IC=0
IC=-2A, IB=-0.2A
IC=-1A, VCE=-4V
IC=-0.1A, VCE=-4V
IC=-1A, VCE=-4V
VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
Classification Of hFE2
Rank
hFE
B
C
D
60-120
100-200
160-320
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB857 | Silicon PNP Triple Diffused |
| 2SB888 | Driver Applications |
| 2SB891F | MEDIUM POWER TRANSISTOR(-32V, -2A) |
| 2SB911MP | MEDIUM POWER TRANSISTOR(-32V, -2A) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB857_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB857-B-T6CK | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-B-T6CR | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
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