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參數資料
| 型號： | 2SB887 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | TO-3PB, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 49K |
| 代理商： | 2SB887 |
2SB887 / 2SD1197
No.1079-1/4
Applications
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
High DC current gain.
Large current capacity and wide ASO.
Low saturation voltage.
Specifications ( ) : 2SB887
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)110
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)10
A
Collector Current (Pulse)
ICP
(--)15
A
Collector Dissipation
PC
2.5
W
Tc=25°C70
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)80V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)5V, IC=0A
(--)3.0
mA
DC Current Gain
hFE
VCE=(--)3V, IC=(--)5A
1500
4000
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)5A
20
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)5A, IB=(--)10mA
(--1.0)0.9
(--)1.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)5A, IB=(--)10mA
(--)2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)5mA, IE=0A
(--)110
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)50mA, RBE=∞
(--)100
V
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN1079B
D0606IA TI IM TC-00000382 / D1002AS (KT) / 91098HA (KT) / 4177TA / D152KI, TS
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB887 / 2SD1197
PNP Epitaxial Planar Silicon Darlington Transistor
NPN Triple Diffused Planar Silicon Darlington Transistor
Driver Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB888 | 700 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB888 | 700 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB891FQ | 2 A, 32 V, PNP, Si, POWER TRANSISTOR |
| 2SB891FP | 2 A, 32 V, PNP, Si, POWER TRANSISTOR |
| 2SB905 | 1500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB888 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Driver Applications |
| 2SB888-AA | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 80V 50A TO-92 |
| 2SB889F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
| 2SB889FP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-126 |
| 2SB889FQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-126 |
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