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參數(shù)資料
| 型號： | 2SB906Y(2-7J1A) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7J1A, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 160K |
| 代理商： | 2SB906Y(2-7J1A) |
2SB906
2006-11-21
1
TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)
2SB906
Audio Frequency Power Amplifier Application
Low collector saturation voltage
: VCE (sat) = 1.0 V (typ.) (IC = 3 A, IB = 0.3 A)
High power dissipation: PC = 20 W (Tc = 25°C)
Complementary to 2SD1221
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
3
A
Base current
IB
0.5
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
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| 2SB906(2-7J1A) | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB906Y(2-7B1A) | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB906(2-7B1A) | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB906O(2-7B1A) | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB907(2-7B2A) | 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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