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參數(shù)資料
| 型號(hào)： | 2SB907(2-7J1A) |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-7J1A, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 194K |
| 代理商： | 2SB907(2-7J1A) |
2SB907
2002-07-23
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB907
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
High DC current gain: hFE (1) = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)
Complementary to 2SD1222.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Base current
IB
0.3
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
15
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
BASE
EMITTER
≈ 4.8 k
≈ 300
COLLECTOR
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