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參數資料
型號: 2SB919-S
元件分類: 功率晶體管
英文描述: 8 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數: 1/4頁
文件大小: 38K
代理商: 2SB919-S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
30V/8A High-Speed Switching Applications
Ordering number:ENN1046B
2SB919/2SD1235
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/D251MH/4067KI/D152KI, TS No.1046–1/4
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( ) : 2SB919
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2010C
[2SB919/2SD1235]
Applications
Large current switching of relay drivers, high-speed
inverters, converters.
Features
Low collector-to-emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Tc=25C
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* : The 2SB919/2SD1235 are classified as follows according to hFE at 1A.
Continued on next page.
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