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參數資料
| 型號： | 2SB930 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 49K |
| 代理商： | 2SB930 |
1
Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1253 and 2SD1253A
I
Features
G
High forward current transfer ratio h
FE
which has satisfactory linearity
G
Low collector to emitter saturation voltage V
CE(sat)
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–5
–8
–4
40
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB930
2SB930A
2SB930
2SB930A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –4A, I
B
= – 0.4A
V
CE
= –10V, I
C
= – 0.1A, f = 1MHz
I
C
= –4A, I
B1
= – 0.4A, I
B2
= 0.4A
min
–60
–80
70
15
typ
20
0.2
0.5
0.2
max
–400
–400
–700
–700
–1
250
–2
–1.5
Unit
μ
A
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SB930
2SB930A
2SB930
2SB930A
2SB930
2SB930A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
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PDF描述 |
|---|---|
| 2SB930A | Silicon PNP epitaxial planar type(For power amplification) |
| 2SD1253A | Silicon PNP epitaxial planar type(For power amplification) |
| 2SB931 | Silicon PNP epitaxial planar type(For power switching) |
| 2SB932 | Silicon PNP epitaxial planar type(For power switching) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB930A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (I) |
| 2SB930AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-262VAR |
| 2SB930AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-262VAR |
| 2SB930AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB930P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-262VAR |
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