- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371493 > 2SB936 (PANASONIC CORP) Silicon PNP epitaxial planar type(For low-voltage switching) PDF資料下載
參數(shù)資料
| 型號： | 2SB936 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 中文描述： | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | 2SB936 |
1
Power Transistors
2SB936, 2SB936A
Silicon PNP epitaxial planar type
For low-voltage switching
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
High-speed switching
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–40
–50
–20
–40
–5
–20
–10
40
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB936
2SB936A
2SB936
2SB936A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= –40V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –3A
I
C
= –10A, I
B
= – 0.33A
I
C
= –10A, I
B
= – 0.33A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
I
C
= –3A, I
B1
= – 0.1A, I
B2
= 0.1A
min
–20
–40
45
90
typ
100
400
0.1
0.5
0.1
max
–50
–50
–50
260
– 0.6
–1.5
Unit
μ
A
μ
A
V
V
V
MHz
pF
μ
s
μ
s
μ
s
2SB936
2SB936A
2SB936
2SB936A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB936A | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 2SB937P | Si PNP EPITAXIAL PLANAR |
| 2SB937 | Si PNP EPITAXIAL PLANAR |
| 2SB937A | Si PNP EPITAXIAL PLANAR |
| 2SB938R | Si PNP EPITAXIAL PLANAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB936A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB936AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR |
| 2SB936AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR |
| 2SB936AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB936P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。