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參數資料
| 型號： | 2SB947 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 中文描述： | 10 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 56K |
| 代理商： | 2SB947 |
1
Power Transistors
2SB947, 2SB947A
Silicon PNP epitaxial planar type
For low-voltage switching
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
High-speed switching
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–40
–50
–20
–40
–5
–15
–10
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB947
2SB947A
2SB947
2SB947A
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= –40V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –2A
I
C
= –7A, I
B
= – 0.23A
I
C
= –7A, I
B
= – 0.23A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
I
C
= –2A, I
B1
= –66mA, I
B2
= 66mA
min
–20
–40
45
90
typ
150
200
0.1
0.5
0.1
max
–50
–50
–50
260
– 0.6
–1.5
Unit
μ
A
μ
A
V
V
V
MHz
pF
μ
s
μ
s
μ
s
2SB947
2SB947A
2SB947
2SB947A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB947A | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 2SB948 | Silicon PNP epitaxial planar type |
| 2SB948A | Silicon PNP epitaxial planar type |
| 2SB949 | Silicon PNP epitaxial planar type Darlington |
| 2SB949A | For Power Amplification And Switching |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB947A | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
| 2SB947AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | SOT-186 |
| 2SB947AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | SOT-186 |
| 2SB947AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | SOT-186 |
| 2SB947P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SOT-186 |
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