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參數資料
| 型號： | 2SC0829B |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92VAR |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁| 30mA的一（c）|至92VAR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 105K |
| 代理商： | 2SC0829B |
1
Publication date: March 2003
SJC00098CED
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 030
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Forward current transfer ratio *
hFE
VCE
= 10 V, I
C
= 1 mA
70
250
Transition frequency
fT
VCB = 10 V, IE = 1 mA, f = 200 MHz
150
230
MHz
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 1 mA, f = 10.7 MHz
1.3
1.6
pF
(Common emitter)
Reverse transfer impedance
Zrb
VCB = 10 V, IE = 1 mA, f = 2 MHz
60
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Note) The part number in the parenthesis shows conventional part number.
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
B
C
hFE
70 to 160
110 to 250
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
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