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參數資料
| 型號： | 2SC2120 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 73K |
| 代理商： | 2SC2120 |
1112SC2120
2005-08-02
1
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
High hFE: hFE (1) = 100~320
1 watts amplifier applications.
Complementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
V
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
100
320
DC current gain
hFE (2)
VCE = 1 V, IC = 700 mA
35
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 20 mA
0.5
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
0.5
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Note: hFE (1) classification O: 100~200, Y: 160~320
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC2120_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT process) |
| 2SC2120_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Encapsulated Transistor |
| 2SC2120O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-92 |
| 2SC2120-O | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Power Amplifier Applications |
| 2SC2120-O(F) | 制造商:Toshiba 功能描述:NPN Bulk |
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