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參數(shù)資料
| 型號： | 2SC2236-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 110K |
| 代理商： | 2SC2236-Y |
2SC2236
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2236
Audio Power Amplifier Applications
Complementary to 2SA966 and 3-watt output applications.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Base current
IB
0.15
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
―
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
5
―
V
DC current gain
hFE
(Note)
VCE = 2 V, IC = 500 mA
100
―
320
Collector-emitter saturation voltage
VCE (sat)
IC = 1.5 A, IB = 0.03 A
―
2.0
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 500 mA
―
1.0
V
Transition frequency
fT
VCE = 2 V, IC = 500 mA
―
120
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
30
pF
Note: hFE classification O: 100 to 200, Y: 160 to 320
Unit: mm
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2236-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 30V 1.5A 3-Pin LSTM Bulk |
| 2SC2236-Y(TE6,F,M) | 功能描述:兩極晶體管 - BJT Transistor NPN, 30V, 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC2236-Y(TPE6,F) | 功能描述:兩極晶體管 - BJT NPN 30V 1.5A 900mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC2237 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
| 2SC2238 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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