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參數資料
型號: 2SC2258
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type
中文描述: 0.1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝: ROHS COMPLIANT, TO-126B-A1, 3 PIN
文件頁數: 1/3頁
文件大小: 71K
代理商: 2SC2258
Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
1
Publication date: January 2003
SJD00098BED
For high breakdown voltage general amplification
Features
High collector-emitter voltage (Base open) V
CEO
High transition frequency f
T
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings
T
a
=
25
°
C
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
3.2
±
0.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Emitter-base voltage (Collector open)
V
EBO
I
E
=
0.1 mA, I
C
=
0
V
CE
=
20 V, I
C
=
40 mA
V
CE
=
250 V, R
BE
=
100 k
7
V
Base-emitter voltage
V
BE
I
CER
1.2
V
μ
A
Collector-emitter cutoff current
(Resistor between B and E)
100
Forward current transfer ratio
h
FE1
V
CE
=
20 V, I
C
=
40 mA
V
CE
=
50 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
5 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
50 V, I
E
=
0, f
=
1 MHz
40
h
FE2
30
Collector-emitter saturation voltage
V
CE(sat)
f
T
C
ob
1.2
V
Transition frequency
100
MHz
Collector output capacitance
(Common base, input open circuited)
3.0
4.5
pF
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
Note)*1: Without heat sink
*2 :With a 100
×
100
×
2 mm Al heat sink
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
250
V
Collector-emitter voltage (Base open)
V
CEO
250
V
Emitter-base voltage (Collector open)
V
EBO
I
C
7
V
Collector current
100
mA
Peak collector current
I
CP
150
1.2
*1
4
*2
mA
Collector power dissipation
P
C
W
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
相關PDF資料
PDF描述
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